SEMINARIUM

Dnia: 18.11.2009 roku (środa)
o godzinie 11:00 w sali 138

referat pt.:

Tunneling Electroresistance in Ferroelectric Tunnel Junctions

wygłosi

dr Mikhail Zhuravlev

Kurnakov Institute of General and Inorganic Chemistry Russian Academy of Sciences, Moscow

It is devoted to electroresistance switching of asymmetric ferroelectric tunnel junctions (FTJ) which occurs
when the reversal of the electric polarization of the ferroelectric barrier takes place. The switching of the spin polarization
of the current and TMR in the FTJ with ferromagnetic electrodes will be considered as well.